#MAKE OSCILATTORS ON SOLVE ELEC FULL#
A detailed understanding of this operating mechanisms is essential prerequisite to exploit the full potentiality of volatile memristors. This switching between high and low resistance states is at the base of cutting edge technological implementations such as neural/synaptic devices or random number generators. Volatile memristors are versatile devices whose operating mechanism is based on an abrupt and volatile change of resistivity. This is achieved at 41% read current penalty. As a result of SRAM circuit analysis, the read static noise margin is improved by 43.9%, and static power is reduced by 58.6% in the near-threshold voltage region when the PTM is connected to the pull-down transistor source terminal of 6T SRAM for high density. As a result of inverter ring oscillator (INV RO) circuit analysis, the optimized hyper-FET increases speed by +8.74% and reduces power consumption by −16.55%, with IOFF = 5 nA of baseline-FET and PTM TT = 50 ps compared to the conventional mNS-FET in the ultra-low-power region.
We present an optimization flow considering hyper-FET characteristics at the device and circuit level, and analyze hyper-FET performance according to the phase transition time (TT) and baseline-FET off-leakage current (IOFF) variations of the PTM. Through this, a benchmark was performed for presenting device design guidelines and for using ultra-low-power applications. In this work, a hybrid-phase transition field-effects-transistor (hyper-FET) integrated with phase-transition materials (PTM) and a multi-nanosheet FET (mNS-FET) at the 3 nm technology node were analyzed at the device and circuit level.
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